Parameter 

Symbol 

Rating 

 nm

 nm

Power Dissipation 

Pd 

80mw

90mw

Pulse Forward Current 

IFP 

100mA

100mA

Forward Current 

IF 

30mA

30mA

Reverse Voltage 

VR 

5V 

Junction Temperature 

Tj 

115°C 

Operating Tempertature 

Topr 

-40 - +80°C 

Storage Tempertature 

Tstg 

-40 - +100°C 

Soldering Temperature 

Tsol 

260°C 

Electro-Static-Discharge(HBM) 

ESD 

2000v 

Warranty 

Time 

5Years 

Antistatic bag 

Piece 

2000Bag 

*Pulse Forward Current Condition:Duty 1% and Pulse Width=10us. 

*Soldering Condition:Soldering condition must be completed with 3 seconds at 260°C 

Parameter 

Symbol 

Min 

Typ 

Max 

Unit 

Test Condition 

Forward Voltage

630nm

VF

1.9

2.0

2.4

V

IF=20mA

850nm

1.3

1.7

Luminous Intensity

850nm

IV

2.8

3.5

lm

IF=20mA

630nm

8

12

mw/sr

Peak Wavelength

630nm

λP

633

645

nm

IF=20mA

850nm

840

850

860

Half Width

630nm

Dl

18

nm

IF=20mA

850nm

25

Viewing Half Angle

2q1/2

±60

deg

IF=20mA

Reverse Current

630nm

IR

5

uA

VR=5V

850nm

5

*Luminous Intensity is measured by ZWL600. 

*2q1/2 is the off-axis angle at which the luminous intensity is half the axial luminous intensity. 

*lD is derived from the CIE chromaticity diagram and represents the single wavelength which defines the color of the device.